PART |
Description |
Maker |
TD27C010-150V10 QP27C010-200V10 |
128K X 8 UVPROM, 150 ns, CDIP32 128K X 8 OTPROM, 200 ns, PDIP32
|
INTEL CORP
|
SMJ27C010A05 SMJ27C010A-15JM AS27C010A-15ECAM AS27 |
1 MEG UVEPROM UV Erasable Programmable Read-Only Memory 128K X 8 UVPROM, 150 ns, CDIP32 Industry standard 32-pin ceramic dual-in-line package
|
AUSTIN SEMICONDUCTOR INC Micross Components
|
M27W801-100F6TR |
1M X 8 UVPROM, 100 ns, CDIP32
|
STMICROELECTRONICS
|
ST72E272K4D0 |
8-BIT, UVPROM, 8 MHz, MICROCONTROLLER, CDIP32
|
STMICROELECTRONICS
|
M5M27C101JK-15 M5M27C101JK-12 |
128K X 8 UVPROM, 150 ns, CQCC32 128K X 8 UVPROM, 120 ns, CQCC32
|
|
8959809BXA |
128K X 8 STANDARD SRAM, 55 ns, CDIP32
|
AUSTIN SEMICONDUCTOR INC
|
WMS128K8V-17 WMS128K8V-35 WMS128K8V-20DRMA WMS128K |
128Kx8 3.3V Monolithic SRAM(128Kx8,3.3V,单片静态RAM(存取时7ns 128Kx8 3.3单片的SRAM28Kx83.3伏,单片静态随机存储器(存取时间为35ns)) 128K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32 128K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32 128K X 8 STANDARD SRAM, 15 ns, CDSO32 CERAMIC, SOJ-32 128K X 8 STANDARD SRAM, 17 ns, CDIP32 SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32 128K X 8 STANDARD SRAM, 20 ns, CDFP32
|
White Electronic Designs Corporation White Electronic Designs, Corp.
|
MBM27C1000-25TV |
128K X 8 UVPROM, 250 ns, CQCC36
|
|
AM1702A AM1702A-1 AM1702AL-2 |
256 X 8 UVPROM, 1000 ns, CDIP24 256 X 8 UVPROM, 550 ns, CDIP24 256 X 8 UVPROM, 650 ns, CDIP24
|
ADVANCED MICRO DEVICES INC
|
M27C4002-15J1 M27C4002-80XJ6TR M27C4002-80XJ1X M27 |
256K X 16 UVPROM, 150 ns, CQCC44 256K X 16 UVPROM, 80 ns, CQCC44 256K X 16 UVPROM, 70 ns, CDIP40 256K X 16 OTPROM, 120 ns, PDIP40 256K X 16 OTPROM, 120 ns, PQCC44 256K X 16 OTPROM, 200 ns, PQCC44 256K X 16 UVPROM, 60 ns, CQCC44
|
STMICROELECTRONICS
|
IS61LF12832-8.5TQI IS61LF12832-7.5TQI IS61LF12832- |
128K x 32, 128K x 36 synchronous flow-through static RAM 128K X 32 CACHE SRAM, 8.5 ns, PQFP100
|
INTEGRATED SILICON SOLUTION INC
|
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